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SN7002IXTSA1

Part No SN7002IXTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description SMALL SIGNAL MOSFETS PG-SOT23-3 / N-Channel 60 V 200mA (Ta) 360mW (Ta) Surface Mount PG-SOT-23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series -
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 26µA
Gate Charge (Qg) (Max) @ Vgs 0.9 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 32 pF @ 30 V
FET Feature -
Power Dissipation (Max) 360mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number SN7002I
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1356005-SN7002IXTSA1
Ultra Librarian 3D Model Ultra Librarian SN7002IXTSA1 CAD Model

Description

The SN7002I is an N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies.

  • Package: Tape and Reel
  • Drain-to-Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id) @ 25°C: 200mA
  • Maximum Drive Voltage for On-Resistance: 4.5V and 10V
  • On-Resistance (Rds On):
  • Gate-Source Threshold Voltage (Vgs(th)): 1.8V @ 26μA
  • Product Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
795+ $0.0631 $50.1645
1,695+ $0.0591 $100.1745
2,635+ $0.0570 $150.1950
3,775+ $0.0530 $200.0750
4,915+ $0.0509 $250.1735
6,135+ $0.0489 $300.0015
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,590 pieces
MOQ: 795 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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