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Same model may have multiple batches, images only for reference.
SPA04N50C3 Real Image
Same model may have multiple batches, images only for reference.

SPA04N50C3

Part No SPA04N50C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 560V 4.5A TO220FP
Datasheet
SPA04N50C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 560V
Continuous Drain Current at 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 200μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 470pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 31W (Tc)
Maximum Rds On at Id,Vgs 950 mOhm @ 2.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 065903-SPA04N50C3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPA04N50C3 CAD Model

Description

The Infineon Technologies SPA04N50C3 is an N-channel MOSFET with a PG-TO220-FP package type and a dimension of TO-220-3 Full Pack.

  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 560V
  • Maximum Rds On @ Id,Vgs: 950 mOhm @ 2.8A, 10V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.7140 $60.4260
21+ $5.5082 $115.6722
33+ $5.3361 $176.0913
45+ $5.1640 $232.3800
58+ $4.9919 $289.5302
78+ $4.4756 $349.0968
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Availability: 1,020 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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