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SPA15N65C3

Part No SPA15N65C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 15A TO220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 675μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 1600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 34W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 9.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3
Dimension TO-220-3 Full Pack
Win Source Part Number 065913-SPA15N65C3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPA15N65C3 CAD Model

Description

The Infineon Technologies SPA15N65C3 is an N-channel MOSFET belonging to the Discrete Semiconductor Products family. and a limited supply and demand status.

  • Manufacturer: Infineon Technologies
  • Win Source Part Number: 065913
  • Maximum Power Dissipation: 34W (Tc)
  • Maximum Drain-Source Breakdown Voltage: 650V
  • Maximum Rds On @ Id,Vgs: 280 mOhm @ 9.4A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.8267 $57.9204
30+ $3.9605 $118.8150
46+ $3.8369 $176.4974
63+ $3.7133 $233.9379
81+ $3.5897 $290.7657
108+ $3.2178 $347.5224
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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