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Same model may have multiple batches, images only for reference.
SPB04N60C3 Infineon Technologies
Same model may have multiple batches, images only for reference.

SPB04N60C3

Part No SPB04N60C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 4.5A D2PAK
Datasheet
SPB04N60C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 200μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 490pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 950 mOhm @ 2.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 005106-SPB04N60C3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPB04N60C3 CAD Model

Description

The Infineon Technologies SPB04N60C3 is a high-popularity N-channel MOSFET that is commonly used in various electronic applications.

  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 4.5A @ 25°C
  • Maximum Power Dissipation: 50W
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6145 $58.3775
230+ $0.5036 $115.8280
355+ $0.4886 $173.4530
490+ $0.4724 $231.4760
635+ $0.4562 $289.6870
850+ $0.4100 $348.5000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 48,000 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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