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Same model may have multiple batches, images only for reference.
SPB07N60C3ATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

SPB07N60C3ATMA1

Part No SPB07N60C3ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 7.3A TO263-3
Datasheet
SPB07N60C3ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 25 V
Power Dissipation (Max) 83W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SPB07N
Standard Package 1,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278391-SPB07N60C3ATMA1
Ultra Librarian 3D Model Ultra Librarian SPB07N60C3ATMA1 CAD Model

Description

The SPB07N60C3ATMA1 is a high-voltage MOSFET transistor from Infineon Technologies.

  • Series: CoolMOS™
  • Channel Type: N-Channel
  • Drain-to-Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 7.3A @ 25°C
  • On-Resistance (Rds On): 600mOhm
  • Package: TO-263-3, D²Pak
  • Gate Charge (Qg): 27nC @ 10V
  • Temperature Range: -55°C to 150°C

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