The Infineon Technologies SPB07N60S5ATMA1 is a N-Channel MOSFET with a drain-source breakdown voltage of 600V and a continuous drain current of 7.3A at 25°C.

• Drain-Source Breakdown Voltage: 600V
• Continuous Drain Current: 7.3A @ 25°C
• Maximum Power Dissipation: 83W (Tc)
• Package: PG-TO263-3-2
• Maximum Rds On @ Id,Vgs: 600 mOhm @ 4.6A, 10V
• Gate-Source Threshold Voltage: 5.5V @ 350μA
• Maximum Gate Charge: 35nC @ 10V
• Maximum Input Capacitance: 970pF @ 25V
• Maximum Gate-Source Voltage: ±20V
• Operating Temperature: -55°C to 150°C (TJ)