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Same model may have multiple batches, images only for reference.
SPB10N10 G Real Image
Same model may have multiple batches, images only for reference.

SPB10N10 G

Part No SPB10N10 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 10.3A D2PAK
Datasheet
SPB10N10 G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 21μA
Max Gate Charge 19.4nC @ 10V
Max Input Capacitance 426pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 170 mOhm @ 7.8A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1101477-SPB10N10 G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPB10N10 G CAD Model

Description

The Infineon Technologies SPB10N10 G is a MOSFET transistor with N-channel polarity and a drain-source breakdown voltage of 100V.

  • Drain-Source Breakdown Voltage: 100V
  • Power Dissipation: 50W (Tc)
  • Continuous Drain Current: 10.3A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 21μA
  • Maximum Gate Charge: 19.4nC @ 10V
  • Maximum Rds On @ Id,Vgs: 170 mOhm @ 7.8A, 10V
  • Mounting: SMD (SMT)
  • Package: PG-TO263-3-2, TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Supply and Demand Status: Balanced
  • Status: Obsolete (EOL)
  • Operating Temperature Range: -55°C to 175°C (TJ)

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