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Same model may have multiple batches, images only for reference.
SPB10N10 Real Image
Same model may have multiple batches, images only for reference.

SPB10N10

Part No SPB10N10
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 10.3A D2PAK
Datasheet
SPB10N10 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 21μA
Max Gate Charge 19.4nC @ 10V
Max Input Capacitance 426pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 170 mOhm @ 7.8A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1101476-SPB10N10
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SPB10N10 CAD Model

Description

The SPB10N10 is a N-Channel MOSFET with a drain-source breakdown voltage of 100V and a maximum continuous drain current of 10.3A @ 25°C.

  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 100V
  • Maximum Continuous Drain Current: 10.3A @ 25°C
  • Maximum Rds On: 170 mOhm @ Id,Vgs of 7.8A, 10V
  • Gate-Source Threshold Voltage: 4V @ 21μA
  • Maximum Gate Charge: 19.4nC @ 10V
  • Package: PG-TO263-3-2
  • Ideal for: Discrete semiconductor products
  • Supply and Demand Status: Sufficient

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