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Same model may have multiple batches, images only for reference.
SPB10N10L G Real Image
Same model may have multiple batches, images only for reference.

SPB10N10L G

Part No SPB10N10L G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 10.3A TO-263
Datasheet
SPB10N10L G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2V @ 21μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 444pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 154 mOhm @ 8.1A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 104777-SPB10N10L G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPB10N10L G CAD Model

Description

The Infineon Technologies 104777-SPB10N10L G is a N-Channel MOSFET with a maximum power dissipation of 50W (Tc).

  • Category: discrete semiconductor products
  • Popularity: medium
  • Win Source Part Number: 104777-SPB10N10L G
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 10.3A (Tc)
  • Maximum Rds On: 154 mOhm @ 8.1A, 10V
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2232 $50.2200
550+ $0.1832 $100.7600
850+ $0.1775 $150.8750
1,165+ $0.1717 $200.0305
1,510+ $0.1660 $250.6600
2,020+ $0.1488 $300.5760
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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