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Same model may have multiple batches, images only for reference.
SPB10N10L Real Image
Same model may have multiple batches, images only for reference.

SPB10N10L

Part No SPB10N10L
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 10.3A D2PAK
Datasheet
SPB10N10L Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2V @ 21μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 444pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 154 mOhm @ 8.1A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 106534-SPB10N10L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPB10N10L CAD Model

Description

The Infineon Technologies SPB10N10L is a N-Channel MOSFET electronic component.

  • Category: Discrete Semiconductor Products
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 10.3A (Tc)
  • Package: PG-TO263-3-2
  • Mounting: SMD (SMT)
  • Temperature Range - Operating: -55°C to 175°C (TJ)
  • Power Dissipation (Max): 50W (Tc)
  • Gate-Source Threshold Voltage: 2V @ 21μA
  • Max Gate Charge: 22nC @ 10V
  • Supply and demand status: balance

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10+ $6.0326 $60.3260
24+ $4.9503 $118.8072
37+ $4.7956 $177.4372
50+ $4.6408 $232.0400
65+ $4.4860 $291.5900
87+ $4.0217 $349.8879
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Availability: 13,000 pieces
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