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SPB18P06P G

Part No SPB18P06P G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 18.7A TO-263
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 18.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 28nC @ 10V
Max Input Capacitance 860pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 81.1W (Ta)
Maximum Rds On at Id,Vgs 130 mOhm @ 13.2A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 105880-SPB18P06P G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPB18P06P G CAD Model

Description

The Infineon Technologies SPB18P06P G is a MOSFET that belongs to the Discrete Semiconductor Products category.

  • Supply and demand status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8175 $61.3125
175+ $0.6708 $117.3900
270+ $0.6500 $175.5000
370+ $0.6289 $232.6930
475+ $0.6080 $288.8000
640+ $0.5451 $348.8640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,000 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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