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Same model may have multiple batches, images only for reference.
SIHH11N60E-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHH11N60E-T1-GE3

Part No SIHH11N60E-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A POWERPAK8X8
Datasheet
SIHH11N60E-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 62nC @ 10V
Max Input Capacitance 1076pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 114W (Tc)
Maximum Rds On at Id,Vgs 339 mOhm @ 5.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 8 x 8
Dimension 8-PowerTDFN
Win Source Part Number 142947-SIHH11N60E-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIHH11N60E-T1-GE3 CAD Model

Description

The Vishay SIHH11N60E-T1-GE3 is an N-Channel MOSFET that is suitable for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 11A @ 25°C
  • Maximum Rds On: 339 mOhm @ 5.5A, 10V
  • Maximum Gate Charge: 62nC @ 10V
  • Maximum Input Capacitance: 1076pF @ 100V
  • Package: 8-PowerTDFN
  • Operating Temperature Range (TJ): -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.5934 $59.6482
55+ $2.1280 $117.0400
85+ $2.0616 $175.2360
116+ $1.9951 $231.4316
150+ $1.9285 $289.2750
201+ $1.7290 $347.5290
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 49 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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