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Same model may have multiple batches, images only for reference.
SPB35N10G Real Image
Same model may have multiple batches, images only for reference.

SPB35N10G

Part No SPB35N10G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 35A D2PAK
Datasheet
SPB35N10G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 83μA
Max Gate Charge 65nC @ 10V
Max Input Capacitance 1570pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 44 mOhm @ 26.4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 212017-SPB35N10G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPB35N10G CAD Model

Description

The Infineon Technologies SPB35N10G is a discrete semiconductor product in the MOSFET technology category.

  • Product Status: Obsolete (EOL)
  • Supply and Demand Status: Balanced
  • Mounting Technology: SMD (SMT)
  • Package: PG-TO263-3-2
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 35A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 83μA
  • Maximum Gate Charge: 65nC @ 10V
  • Maximum Rds On: 44 mOhm @ 26.4A, 10V

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