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SIA106DJ-T1-GE3

Part No SIA106DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 18.5mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 30 V
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SC-70-6
Package / Case PowerPAK® SC-70-6
Base Product Number SIA106
Other Names SIA106DJ-T1-GE3CT,SIA106DJ-T1-GE3TR,SIA106DJ-T1-GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277620-SIA106DJ-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIA106DJ-T1-GE3 CAD Model

Description

The SIA106DJ-T1-GE3 is a N-Channel MOSFET transistor from the TrenchFET® Gen IV series.

  • Drain to Source Voltage: 60V
  • Continuous Drain Current: 10A (Ta), 12A (Tc)
  • Maximum On-Resistance: 18.5mOhm @ 4A, 10V
  • Gate Threshold Voltage: 4V @ 250µA
  • Packaging: tape and reel
  • Package/Case Size: PowerPAK® SC-70-6
  • Gate Charge: 13.5 nC @ 10V
  • Input Capacitance: 540 pF @ 30V
  • Operating Temperature Range: -55°C to 150°C
  • Power Dissipation: 3.5W (Ta), 19W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.7866 $51.1290
155+ $0.6455 $100.0525
240+ $0.6253 $150.0720
335+ $0.6051 $202.7085
430+ $0.5850 $251.5500
575+ $0.5244 $301.5300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,067 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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