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Same model may have multiple batches, images only for reference.
SPB80N06S08ATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

SPB80N06S08ATMA1

Part No SPB80N06S08ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A D2PAK
Datasheet
SPB80N06S08ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 240μA
Max Gate Charge 187nC @ 10V
Max Input Capacitance 3660pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 7.7 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1101491-SPB80N06S08ATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPB80N06S08ATMA1 CAD Model

Description

The Infineon Technologies SPB80N06S08ATMA1 is an N-channel MOSFET with a drain-source breakdown voltage of 55V and a continuous drain current of 80A at 25°C.

  • Manufacturer: Infineon Technologies
  • Product Name: SPB80N06S08ATMA1
  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 80A
  • Package: PG-TO263-3-2
  • Maximum Power Dissipation: 300W
  • Gate-Source Threshold Voltage: 4V @ 240μA
  • Maximum Gate-Source Voltage: ±20V

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