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Same model may have multiple batches, images only for reference.
UPA1917TE-T1-AT
Same model may have multiple batches, images only for reference.

UPA1917TE-T1-AT

Part No UPA1917TE-T1-AT
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V SC-95 / P-Channel 20 V 6A (Ta) Surface Mount SC-95-6, Mini Mold Thin
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Tape & Reel
Product Status Last Time Buy
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Rds On (Max) @ Id, Vgs 53mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 8.1 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds 835 pF @ 10 V
Mounting Type Surface Mount
Supplier Device Package SC-95-6, Mini Mold Thin
Package / Case SC-95-6
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 902067-UPA1917TE-T1-AT
Ultra Librarian 3D Model Ultra Librarian UPA1917TE-T1-AT CAD Model

Description

The 902067-UPA1917TE-T1-AT is a P-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Renesas Electronics America.

  • Category: discrete semiconductor products known as FETs and MOSFETs
  • Status: currently active
  • Packaging: tape and reel
  • Standard Package: 3,000 pieces
  • Mounting Type: surface mount
  • Package/Case: SC-95-6
  • Vdss: 20V
  • Id: 6A @ 25°C
  • Rds On (maximum resistance between drain and source): 53mOhm @ 3A and 4.5V
  • Vgs(th): 1.5V @ 1mA
  • ECCN: EAR99
  • MSL: 1 (unlimited shelf life)
  • REACH Status: affected
  • HTSUS Code: 8541.29.0095
  • Applications: various applications where efficient switching and amplification of signals is required

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