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Same model may have multiple batches, images only for reference.
SPB80N06S2-09 Real Image
Same model may have multiple batches, images only for reference.

SPB80N06S2-09

Part No SPB80N06S2-09
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A D2PAK
Datasheet
SPB80N06S2-09 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 125μA
Max Gate Charge 80nC @ 10V
Max Input Capacitance 3140pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 190W (Tc)
Maximum Rds On at Id,Vgs 9.1 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 065920-SPB80N06S2-09
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPB80N06S2-09 CAD Model

Description

The Infineon Technologies SPB80N06S2-09 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 80A @ 25°C
  • Package: PG-TO263-3-2
  • Mounting Technology: SMD (SMT)
  • Power Dissipation: 190W (Tc)
  • Maximum Rds On: 9.1 mOhm @ 50A, 10V
  • Gate-Source Threshold Voltage: 4V @ 125μA
  • Maximum Gate Charge: 80nC @ 10V
  • Maximum Input Capacitance: 3140pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Supply and Demand Status: Limited

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