The SPB80N06S2L-11 is an OptiMOS™ Power MOSFET from Infineon Technologies. It is an N-channel enhancement mode MOSFET designed for high efficiency and power density. This MOSFET uses advanced synchronous rectification optimized (S2L) technology to achieve very low on-state resistance (RDS(on)) and excellent switching performance.

Applications:

• Synchronous rectification in DC-DC converters
• Point of Load (POL) converters
• OR-ing MOSFETs in redundant power supplies
• Battery management systems
• High-frequency switching applications

Features:

• OptiMOS™ technology for extremely low RDS(on)
• Synchronous rectification optimized
• Fast switching speed
• Avalanche rated
• 100% Avalanche tested
• Pb-free lead plating; RoHS compliant

Benefits:

• Highest efficiency in synchronous rectification applications
• Reduced power losses and improved thermal performance
• Smaller and lighter power supply designs
• Robust and reliable operation
• Environmentally friendly due to Pb-free construction

Technical Specifications:

The SPB80N06S2L-11 features a drain-source voltage (VDS) of 60V, a continuous drain current (ID) of 80A, and a pulsed drain current (IDpulse) of 300A. The on-resistance (RDS(on)) is typically 3.3 mΩ at VGS = 10V. The gate charge (Qg) is typically 40 nC. It is available in a PG-TO263-3 package.

The ultra-low RDS(on) of this MOSFET significantly reduces conduction losses, resulting in higher efficiency and lower heat dissipation. Its fast switching speed minimizes switching losses, enabling higher operating frequencies. The synchronous rectification optimization makes it ideal for use in DC-DC converters where high efficiency is paramount. The 100% avalanche testing ensures robust and reliable performance in demanding applications. It is also known under the part number 2N06L11.