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SPD02N80C3

Part No SPD02N80C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 2A 3TO252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 120μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 290pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 42W (Tc)
Maximum Rds On at Id,Vgs 2.7 Ohm @ 1.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 094231-SPD02N80C3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPD02N80C3 CAD Model

Description

The Infineon Technologies SPD02N80C3 is an N-channel MOSFET that is highly popular in the market.

  • Maximum Power Dissipation: 42W (Tc)
  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 2A (Tc)
  • Ideal for: use in various electronic applications that require a reliable and high-performance MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.7811 $50.7715
160+ $0.6409 $102.5440
245+ $0.6209 $152.1205
335+ $0.6008 $201.2680
435+ $0.5808 $252.6480
580+ $0.5207 $302.0060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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