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SPD06N60C3ATMA1

Part No SPD06N60C3ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 750mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id 3.9V @ 260µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 620 pF @ 25 V
Power Dissipation (Max) 74W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO252-3-1
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SPD06N60
Other Names INFINFSPD06N60C3ATMA1,SP001117770,2156-SPD06N60C3ATMA1
Standard Package 2,500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278360-SPD06N60C3ATMA1
Ultra Librarian 3D Model Ultra Librarian SPD06N60C3ATMA1 CAD Model

Description

The Infineon Technologies SPD06N60C3ATMA1 is an N-Channel MOSFET designed for use in single MOSFET modules.

  • Manufacturer: Infineon Technologies
  • MOSFET Type: N-Channel
  • Maximum Drain-Source Voltage: 600V
  • Maximum Continuous Drain Current: 6.2A
  • Rds On (Max): 750mOhm @ 3.9A and 10V
  • Vgs(th): 3.9V @ 260μA
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4338 $50.1830
85+ $1.1765 $100.0025
135+ $1.1397 $153.8595
185+ $1.1030 $204.0550
235+ $1.0662 $250.5570
315+ $0.9559 $301.1085
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,900 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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