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Same model may have multiple batches, images only for reference.
SPD07N20 Real Image
Same model may have multiple batches, images only for reference.

SPD07N20

Part No SPD07N20
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 7A TO-252
Datasheet
SPD07N20 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 31.5nC @ 10V
Max Input Capacitance 530pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 400 mOhm @ 4.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1101544-SPD07N20
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPD07N20 CAD Model

Description

The Infineon Technologies SPD07N20 is an N-channel MOSFET that is designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 7A @ 25°C
  • Maximum Rds On: 400 mOhm @ 4.5A, 10V
  • Gate Charge: 31.5nC @ 10V
  • Applications: SMD (SMT) mounting applications
  • Package: PG-TO252-3
  • Popularity: Medium

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