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SPD07N60S5

Part No SPD07N60S5
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7.3A DPAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 350μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 970pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 4.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 136049-SPD07N60S5
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPD07N60S5 CAD Model

Description

The Infineon Technologies SPD07N60S5 is an N-channel MOSFET transistor that has a maximum drain-source breakdown voltage of 600V and a continuous drain current of 7.3A @ 25°C.

  • Gate-Source Threshold Voltage: 5.5V @ 350µA
  • Maximum Gate Charge: 35nC @ 10V
  • Power Dissipation: 83W @ Tc
  • Mounting: designed for surface-mounting.
  • Package: PG-TO252-3 package
  • Reliable choice for: high voltage and high current applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9516 $61.8540
150+ $0.7809 $117.1350
230+ $0.7564 $173.9720
320+ $0.7320 $234.2400
410+ $0.7077 $290.1570
550+ $0.6345 $348.9750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 34,373 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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