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Same model may have multiple batches, images only for reference.
SPD08P06P Real Image
Same model may have multiple batches, images only for reference.

SPD08P06P

Part No SPD08P06P
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SIPMOS Power-Transistor | MOSFET P-CH 60V 8.83A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tape and Reel
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 8.83A
Rds On (Maximum) at Id, Vgs 300mOhm at 6.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 13nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds 420pF at 25V
Power Dissipation (Maximum) 42W
Mounting Style SMD
Supplier Device Package PG-TO252-3
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 1257874-SPD08P06P
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPD08P06P CAD Model

Description

The SPD08P06P is a MOSFET product manufactured by Infineon Technologies.

  • Manufacturer: Infineon Technologies
  • Product Name: SPD08P06P
  • Supply and Demand Status: Balanced
  • Intended Use: Discrete semiconductor products
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 8.83A
  • Maximum Power Dissipation: 42W
  • Package: PG-TO252-3

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