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Same model may have multiple batches, images only for reference.
SPD25N06S2-40 Real Image
Same model may have multiple batches, images only for reference.

SPD25N06S2-40

Part No SPD25N06S2-40
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 29A DPAK
Datasheet
SPD25N06S2-40 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 26μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 710pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 68W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 13A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package P-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1101548-SPD25N06S2-40
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPD25N06S2-40 CAD Model

Description

The Infineon Technologies SPD25N06S2-40 is a MOSFET transistor designed for use in discrete semiconductor products.

  • Manufacturer: Infineon Technologies
  • Product Name: SPD25N06S2-40
  • Maximum Power Dissipation: 68W
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 29A
  • Maximum Rds On @ Id,Vgs: 40 mOhm @ 13A, 10V
  • Gate-Source Threshold Voltage: 4V @ 26μA
  • Maximum Gate Charge: 18nC @ 10V
  • Maximum Input Capacitance: 710pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Technology: N-Channel
  • Mounting: SMD (SMT)
  • Packaging: reel - TR
  • Case / Package: P-TO252-3
  • Lifecycle Status: obsolete (EOL)
  • Popularity: medium
  • Supply and Demand Status: balance

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240+ $0.4853 $116.4720
370+ $0.4702 $173.9740
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660+ $0.4398 $290.2680
880+ $0.3943 $346.9840
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