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Same model may have multiple batches, images only for reference.
SPD30N03S2L10GBTMA1 Real Image
Same model may have multiple batches, images only for reference.

SPD30N03S2L10GBTMA1

Part No SPD30N03S2L10GBTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30A TO252-3
Datasheet
SPD30N03S2L10GBTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 50μA
Max Gate Charge 41.8nC @ 10V
Max Input Capacitance 1550pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 137559-SPD30N03S2L10GBTMA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPD30N03S2L10GBTMA1 CAD Model

Description

The Infineon Technologies SPD30N03S2L10GBTMA1 is a MOSFET in the Discrete Semiconductor Products category.

  • Suitable for: use in various applications, including power supplies, motor control, and lighting.
  • Design: designed with advanced features that make it reliable and efficient.
  • Description: a high-performance MOSFET that offers superior functionality and performance.

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