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Same model may have multiple batches, images only for reference.
SPD30N06S2-15 Real Image
Same model may have multiple batches, images only for reference.

SPD30N06S2-15

Part No SPD30N06S2-15
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 30A DPAK
Datasheet
SPD30N06S2-15 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 80μA
Max Gate Charge 52nC @ 10V
Max Input Capacitance 2070pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 14.7 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package P-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 065927-SPD30N06S2-15
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPD30N06S2-15 CAD Model

Description

The Infineon Technologies 345595 is an N-channel MOSFET designed for surface mount technology.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 30A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 80μA
  • Maximum Gate Charge: 52nC @ 10V
  • Maximum Rds On: 14.7 mOhm @ 30A, 10V
  • Market Status: in the open market.
  • Supply and demand status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $18.7688 $75.0752
8+ $15.4008 $123.2064
12+ $14.9191 $179.0292
16+ $14.4375 $231.0000
21+ $13.9570 $293.0970
28+ $12.5133 $350.3724
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 672 pieces
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