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SPD30P06P G

Part No SPD30P06P G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 30A TO252-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1.7mA
Max Gate Charge 48nC @ 10V
Max Input Capacitance 1535pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 75 mOhm @ 21.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 111499-SPD30P06P G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPD30P06P G CAD Model

Description

The Infineon Technologies 111499-SPD30P06P G is a P-Channel MOSFET that can be used in various applications.

  • Package: PG-TO252-3
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 30A (Tc) @ 25°C
  • Maximum Rds On at Id,Vgs: 75 mOhm @ 21.5A, 10V
  • Gate-Source Threshold Voltage: 4V @ 1.7mA
  • Maximum Gate Charge: 48nC @ 10V
  • Maximum Input Capacitance: 1535pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1369 $62.5295
125+ $0.9329 $116.6125
195+ $0.9037 $176.2215
265+ $0.8746 $231.7690
345+ $0.8455 $291.6975
460+ $0.7579 $348.6340
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 54,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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