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Same model may have multiple batches, images only for reference.
SPD50N03S2-07 Real Image
Same model may have multiple batches, images only for reference.

SPD50N03S2-07

Part No SPD50N03S2-07
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A DPAK
Datasheet
SPD50N03S2-07 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 85μA
Max Gate Charge 46.5nC @ 10V
Max Input Capacitance 2170pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 7.3 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1101556-SPD50N03S2-07
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPD50N03S2-07 CAD Model

Description

The Infineon Technologies SPD50N03S2-07 is an N-channel MOSFET transistor.

  • Power Dissipation: 136W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 50A (Tc)
  • Maximum Rds On @ Id,Vgs: 7.3 mOhm @ 50A, 10V
  • Gate-Source Threshold Voltage: 4V @ 85μA
  • Maximum Gate Charge: 46.5nC @ 10V
  • Maximum Input Capacitance: 2170pF @ 25V
  • Package: PG-TO252-3
  • Mounting: SMD (SMT)
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2873 $57.9285
110+ $1.0563 $116.1930
170+ $1.0233 $173.9610
235+ $0.9903 $232.7205
305+ $0.9573 $291.9765
405+ $0.8582 $347.5710
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Availability: 7,900 pieces
MOQ: 45 pcs
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