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Same model may have multiple batches, images only for reference.
SPI07N60C3XKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPI07N60C3XKSA1

Part No SPI07N60C3XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7.3A TO-262
Datasheet
SPI07N60C3XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 350μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 790pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 4.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3-1
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 119444-SPI07N60C3XKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPI07N60C3XKSA1 CAD Model

Description

The Infineon Technologies SPI07N60C3XKSA1 is an N-channel MOSFET with a drain-source breakdown voltage of 600V and a continuous drain current of 7.3A @ 25°C.

  • GPTDescription: It has a maximum Rds On of 600 mOhm @ 4.6A and 10V.
  • GPTDescription: The MOSFET is packaged in a PG-TO262-3-1 case and has a maximum power dissipation of 83W (Tc).
  • GPTDescription: It operates in a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage of ±20V.
  • GPTDescription: The gate-source threshold voltage is 3.9V @ 350μA, and the maximum gate charge is 27nC @ 10V.
  • GPTDescription: The MOSFET is suitable for use in power management and industrial applications.

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20+ $9.0425 $180.8500
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