The Infineon Technologies SPI08N50C3XKSA1 is a N-Channel MOSFET with a drain-source breakdown voltage of 560V and a continuous drain current of 7.6A @ 25°C.

• GPTDescription: The MOSFET has a maximum gate-source voltage of ±20V and a maximum Rds On of 600 mOhm @ Id,Vgs 4.6A, 10V.
• GPTDescription: The device comes in a PG-TO262-3-1 package and has a power dissipation of 83W (Tc).
• GPTDescription: The MOSFET is suitable for use in discrete semiconductor products.
• GPTDescription: The drive voltage (Max Rds On, Min Rds On) is 10V, and the operating temperature range is -55°C to 150°C (TJ).
• GPTDescription: The Infineon Technologies SPI08N50C3XKSA1 is an active product and is supplied in a tube/rail packaging.
• GPTDescription: The supply and demand status of the device is limited.