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Same model may have multiple batches, images only for reference.
SPI12N50C3HKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPI12N50C3HKSA1

Part No SPI12N50C3HKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SPI12N50C3HKSA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 11.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number SPI12N
Other Names SP000014467
Standard Package 500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278351-SPI12N50C3HKSA1
Ultra Librarian 3D Model Ultra Librarian SPI12N50C3HKSA1 CAD Model

Description

The SPI12N50C3HKSA1 is an N-Channel MOSFET transistor from Infineon Technologies.

  • Drain to Source Voltage: 500 V
  • Continuous Drain Current: 11.6A @ 25°C
  • Rds On (Max): 380mOhm @ 7A and 10V
  • Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
  • Power Dissipation (Max): 125W @ 25°C
  • Package: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Supplier Device Package: PG-TO262-3-1
  • Mounting Type: Through-hole
  • Temperature Range: -55°C to 150°C (TJ)
  • Status: Obsolete

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