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Same model may have multiple batches, images only for reference.
SPI15N60C3 Infineon Technologies
Same model may have multiple batches, images only for reference.

SPI15N60C3

Part No SPI15N60C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 15A TO-262
Datasheet
SPI15N60C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 675μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 1660pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 156W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 9.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3-1
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 065939-SPI15N60C3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPI15N60C3 CAD Model

Description

The Infineon Technologies 065939-SPI15N60C3 MOSFET is an N-channel device with a drain-source breakdown voltage of 650V and a continuous drain current of 15A @ 25°C.

  • GPTDescription: It has a maximum power dissipation of 156W and a maximum Rds On of 280 mOhm @ 9.4A and 10V.
  • GPTDescription: With a gate-source threshold voltage of 3.9V @ 675μA, this MOSFET is suitable for use in various applications such as power supplies, lighting, and motor control.
  • GPTDescription: Its TO-262-3 Long Leads package ensures easy mounting and installation.

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