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Same model may have multiple batches, images only for reference.
SPI15N60C3HKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPI15N60C3HKSA1

Part No SPI15N60C3HKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id 3.9V @ 675µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1660 pF @ 25 V
Power Dissipation (Max) 156W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number SPI15N
Other Names SPI15N60C3XK,SPI15N60C3IN,SPI15N60C3IN,SPI15N60C3,SPI15N60C3,SPI15N60C3X,SP000014528,SP000680998
Standard Package 500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278312-SPI15N60C3HKSA1
Ultra Librarian 3D Model Ultra Librarian SPI15N60C3HKSA1 CAD Model

Description

The Infineon Technologies SPI15N60C3HKSA1 is an N-Channel CoolMOS™ MOSFET transistor designed for use in discrete semiconductor products.

  • Maximum Drain to Source Voltage: 650 V
  • Continuous Drain Current: 15 A
  • Maximum On-Resistance: 280 mOhm @ 9.4 A and 10 V
  • Gate Charge: 63 nC @ 10 V
  • Input Capacitance: 1660 pF @ 25 V
  • Package: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Operating Temperature Range: -55°C to 150°C

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