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SPI15N65C3XKSA1

Part No SPI15N65C3XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 15A TO262-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 675μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 1600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 156W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 9.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3-1
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1101566-SPI15N65C3XKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPI15N65C3XKSA1 CAD Model

Description

The 443919 is a high-performance N-channel MOSFET designed for use in various electronic applications. Infineon Technologies

  • Package: PG-TO262-3-1
  • Power Dissipation: 156W (Tc)
  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 15A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3.9V @ 675μA
  • Maximum Gate Charge: 63nC @ 10V
  • Maximum Rds On: 280 mOhm @ 9.4A, 10V
  • Status: Active
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.0420 $57.7980
47+ $2.4960 $117.3120
72+ $2.4179 $174.0888
99+ $2.3400 $231.6600
128+ $2.2620 $289.5360
171+ $2.0279 $346.7709
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,500 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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