The SPN02N60C3E6433 is a N-Channel MOSFET transistor designed for use in discrete semiconductor products, specifically in transistors - FETs, MOSFETs - Single.

• Drain to Source Voltage: 650 V
• Continuous Drain Current: 400mA (Ta) @ 25°C
• Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.1A, 10V
• Vgs(th) (Max) @ Id: 3.9V @ 80µA
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: PG-SOT223-4
• Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
• Power Dissipation (Max): 1.8W (Ta)
• Temperature Range - Operating: -55°C ~ 150°C (TJ)