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Same model may have multiple batches, images only for reference.
SPN04N60S5 Real Image
Same model may have multiple batches, images only for reference.

SPN04N60S5

Part No SPN04N60S5
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 0.8A SOT-223
Datasheet
SPN04N60S5 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 800mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 200μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 950 mOhm @ 2.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 1101613-SPN04N60S5
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPN04N60S5 CAD Model

Description

The Infineon Technologies SPN04N60S5 MOSFET is an N-channel power switch with a drain-source breakdown voltage of 600V and a maximum continuous drain current of 800mA @ 25°C.

  • Drain-Source Breakdown Voltage: 600V
  • Maximum Continuous Drain Current: 800mA @ 25°C
  • Package: PG-SOT223-4
  • Operating Temperature Range: -55°C to 150°C
  • Drive Voltage (Max): 10V
  • Status: Obsolete (EOL)
  • Supply and Demand Status: Balanced

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