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Same model may have multiple batches, images only for reference.
SPP04N60C3HKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPP04N60C3HKSA1

Part No SPP04N60C3HKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SPP04N60C3HKSA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id 3.9V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 490 pF @ 25 V
Power Dissipation (Max) 50W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Base Product Number SPP04N
Other Names SPP04N60C3XK,SPP04N60C3IN,SPP04N60C3X,SPP04N60C3INR,SPP04N60C3XTIN,SPP04N60C3XTIN,SPP04N60C3,SPP04N60C3IN
Standard Package 500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278313-SPP04N60C3HKSA1
Ultra Librarian 3D Model Ultra Librarian SPP04N60C3HKSA1 CAD Model

Description

The Infineon Technologies 1278313-SPP04N60C3HKSA1 is an N-channel MOSFET transistor designed for use in high voltage applications.

  • Maximum Drain to Source Voltage: 650V
  • Maximum Continuous Drain Current: 4.5A
  • On-State Resistance: 950mOhm @ 2.8A, 10V gate-source voltage
  • Gate Threshold Voltage: 3.9V @ 200uA
  • Package: TO-220-3

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