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Same model may have multiple batches, images only for reference.
SPP04N60C3XKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPP04N60C3XKSA1

Part No SPP04N60C3XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 4.5A TO-220
Datasheet
SPP04N60C3XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 200μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 490pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 950 mOhm @ 2.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 192412-SPP04N60C3XKSA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPP04N60C3XKSA1 CAD Model

Description

Infineon Technologies presents a high-performance MOSFET, the SPP04N60C3XKSA1.

  • Polarity: N-channel
  • Maximum Power Dissipation (Tc): 50W (Tc)
  • Package: PG-TO-220-3
  • Dimension: TO-220-3
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current (Tc) @ 25°C: 4.5A (Tc)
  • Maximum Rds On @ Id, Vgs: 950 mOhm @ 2.8A, 10V
  • Gate-Source Threshold Voltage: 3.9V @ 200μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 490pF @ 25V
  • Maximum Gate Charge: 25nC @ 10V
  • Category: Discrete semiconductor products
  • Status: Active
  • Supply: Limited

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