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SPP04N80C3XKSA1

Part No SPP04N80C3XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 100 V
Power Dissipation (Max) 63W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Base Product Number SPP04N80
Other Names SPP04N80C3XTIN,SPP04N80C3,SP000683152,SPP04N80C3IN,SPP04N80C3INR,2156-SPP04N80C3XKSA1,SPP04N80C3X,SPP04N80C3IN,SPP04N80C3XTIN,IFEINFSPP04N80C3XKSA1
Standard Package 50
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278357-SPP04N80C3XKSA1
Ultra Librarian 3D Model Ultra Librarian SPP04N80C3XKSA1 CAD Model

Description

The SPP04N80C3XKSA1 is an N-Channel MOSFET transistor that belongs to the CoolMOS™ series of Infineon Technologies.

  • Drain to Source Voltage (Vdss): 800 V
  • Continuous Drain Current (Id): 4A (Tc) @ 25°C
  • On-State Resistance (Rds On): 1.3Ohm @ 2.5A and 10V
  • Gate Threshold Voltage (Vgs(th)): 3.9V @ 240μA
  • Gate Charge (Qg): 31 nC @ 10 V
  • Input Capacitance (Ciss): 570 pF @ 100 Vds
  • Operating Temperature Range: -55°C and 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.3657 $52.3884
28+ $3.5821 $100.2988
44+ $3.4702 $152.6888
60+ $3.3583 $201.4980
78+ $3.2463 $253.2114
104+ $2.9105 $302.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 930 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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