The SPP06N60C3 is a CoolMOS™ power MOSFET from Infineon Technologies.

• Type: N-Channel
• Drain to Source Voltage (Vdss): 600 V
• Continuous Drain Current (Id) @ 25°C: 6.2A
• Maximum On-State Resistance (Rds On): 750mOhm @ 3.9A, 10V
• Maximum Gate-Source Voltage (Vgs(th)): 3.9V @ 260µA
• Power Dissipation (Max): 74W @ 25°C (Tc)
• Mounting: Through-hole
• Package: TO-220-3
• Supplier Device Package: PG-TO220-3-1
• Gate Charge (Qg): 31 nC @ 10V
• Input Capacitance (Ciss): 620 pF @ 25V
• Maximum Vgs: ±20V
• Temperature Range: -55°C to 150°C
• MSL Level: 1
• REACH Regulations: Unaffected
• HTSUS Code: 8541.29.0095
• Product Status: Active
• Drive Voltage: 10V