The Infineon Technologies SPP08N80C3 is an N-Channel MOSFET with a drain-source breakdown voltage of 800V and a continuous drain current of 8A at 25°C. It is designed for use in discrete semiconductor products and has a power dissipation of 104W (Tc). The SPP08N80C3 has a maximum gate charge of 60nC at 10V and a maximum input capacitance of 1100pF at 100V. It is mounted through hole and packaged in a PG-TO-220-3 case. Its supply and demand status is limited.