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Same model may have multiple batches, images only for reference.
SPP08N80C3 Real Image
Same model may have multiple batches, images only for reference.

SPP08N80C3

Part No SPP08N80C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 8A TO-220AB
Datasheet
SPP08N80C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 470μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 1100pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 104W (Tc)
Maximum Rds On at Id,Vgs 650 mOhm @ 5.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 042833-SPP08N80C3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPP08N80C3 CAD Model

Description

The Infineon Technologies SPP08N80C3 is an N-Channel MOSFET with a drain-source breakdown voltage of 800V and a continuous drain current of 8A at 25°C.

  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current @ 25°C: 8A
  • Power Dissipation: 104W (Tc)
  • Maximum Gate Charge: 60nC @ 10V
  • Maximum Input Capacitance: 1100pF @ 100V
  • Mounting: Through hole
  • Package: PG-TO-220-3
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.9230 $67.3050
75+ $1.5779 $118.3425
115+ $1.5285 $175.7775
160+ $1.4792 $236.6720
205+ $1.4300 $293.1500
275+ $1.2821 $352.5775
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Availability: 11,320 pieces
MOQ: 35 pcs
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