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SPP16N50C3HKSA1

Part No SPP16N50C3HKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 560 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.9V @ 675µA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 25 V
Power Dissipation (Max) 160W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Base Product Number SPP16N
Other Names SPP16N50C3XTIN,SPP16N50C3IN,SPP16N50C3XK,IFEINFSPP16N50C3HKSA1,SPP16N50C3IN,SPP16N50C3X,SPP16N50C3XTIN,SPP16N50C3,SPP16N50C3INR,2156-SPP16N50C3HKSA1
Standard Package 500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278346-SPP16N50C3HKSA1
Ultra Librarian 3D Model Ultra Librarian SPP16N50C3HKSA1 CAD Model

Description

The SPP16N50C3HKSA1 is an N-channel MOSFET transistor from Infineon Technologies.

  • Drain to Source Voltage: 560V
  • Continuous Drain Current: 16A @ 25°C
  • On-Resistance: 280mOhm @ 10A and 10V
  • Gate Charge: 66nC @ 10V
  • Input Capacitance: 1600pF @ 25V
  • Maximum Drive Voltage: ±20V
  • Temperature Range: -55°C to 150°C
  • Package: TO-220-3
  • Mounting: Through-hole

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