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SPP80N03S2L04AKSA1

Part No SPP80N03S2L04AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 80A TO220-3  /  N-Channel 30 V 80A (Tc) 188W (Tc) Through Hole PG-TO220-3-1
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 25 V
Power Dissipation (Max) 188W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Base Product Number SPP80N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SPP80N03S2L-04-ND,SPP80N03S2L-04,IFEINFSPP80N03S2L04AKSA1,SPP80N03S2L04X,SPP80N03S2L04XK,2156-SPP80N03S2L04AKSA1
Standard Package 500
Win Source Part Number 1006574-SPP80N03S2L04AKSA1
Ultra Librarian 3D Model Ultra Librarian SPP80N03S2L04AKSA1 CAD Model

Description

The SPP80N03S2L04AKSA1 is a CoolMOS™ power MOSFET from Infineon Technologies. It's designed for high-efficiency switching applications, particularly in power supplies and motor control. This MOSFET offers very low on-resistance, which minimizes power losses and improves overall system efficiency.

Applications:

  • Synchronous rectification in switched-mode power supplies (SMPS)
  • DC-DC converters
  • Motor control applications
  • Load switches
  • Uninterruptible Power Supplies (UPS)

Features:

  • Optimized for synchronous rectification
  • Very low on-resistance RDS(on) = 4 mΩ (typical)
  • Avalanche rated
  • Logic level drive
  • 100% avalanche tested
  • Pb-free lead plating; RoHS compliant
  • Halogen-free according to IEC61249-2-21

Benefits:

  • Higher efficiency and reduced power losses
  • Improved thermal performance
  • Simplified gate drive requirements
  • Robustness and reliability in demanding applications
  • Environmentally friendly

Technical Specifications:

The SPP80N03S2L04AKSA1 has a drain-source voltage (VDS) rating of 30V and a continuous drain current (ID) rating of up to 80A (depending on the case temperature). The typical on-resistance (RDS(on)) is very low, around 4 mΩ, which significantly reduces conduction losses and improves efficiency. The MOSFET is avalanche rated, providing robustness against voltage spikes and transient conditions. It is a logic-level drive device, meaning it can be easily driven by standard logic circuits, simplifying the gate drive requirements.

The device is packaged in a TO-220 package, which provides good thermal performance and allows for easy mounting onto a heatsink. The SPP80N03S2L04AKSA1 is specifically optimized for synchronous rectification in switched-mode power supplies. Synchronous rectification uses MOSFETs instead of diodes to improve efficiency by reducing the forward voltage drop. This MOSFET's low on-resistance makes it ideal for this application.

In motor control applications, this MOSFET can be used as a switch to control the current flowing through the motor windings. Its low on-resistance minimizes power losses and improves the overall efficiency of the motor control system. The SPP80N03S2L04AKSA1 is a robust and reliable MOSFET that is suitable for a wide range of high-efficiency switching applications.

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