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Same model may have multiple batches, images only for reference.
FQB7N80TM_AM002 Real Image
Same model may have multiple batches, images only for reference.

FQB7N80TM_AM002

Part No FQB7N80TM_AM002
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 6.6A D2PAK / Trans MOSFET N-CH 800V 6.6A 3-Pin(2+Tab) D2PAK T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 800V
Current - Continuous Drain (Id) @ 25°C 6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 52nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1850pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 3.13W (Ta), 167W (Tc)
Rds On (Maximum) @ Id, Vgs 1.5 Ohm @ 3.3A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package D2PAK (TO-263AB)
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 774725-FQB7N80TM_AM002
Popularity Medium
Supply and Demand Status Limited
Family Name FQB7N80
Introduction Date April 01, 2000
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian FQB7N80TM_AM002 CAD Model

Description

The Fairchild/ON Semiconductor FQB7N80TM_AM002 is a MOSFET transistor belonging to the QFET series.

  • Drain-Source Voltage: 800V
  • Maximum Power Dissipation: 3.13W (Ta), 167W (Tc)
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Mounting: Surface Mount Device (SMD)
  • Applications: Power Supplies, Motor Control, Lighting

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