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Same model may have multiple batches, images only for reference.
IPP034NE7N3GXKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP034NE7N3GXKSA1

Part No IPP034NE7N3GXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 100A TO220-3
Datasheet
IPP034NE7N3GXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 75V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 3.8V @ 155μA
Gate Charge (Qg) (Maximum) @ Vgs 117nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 8130pF @ 37.5V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 214W (Tc)
Rds On (Maximum) @ Id, Vgs 3.4 mOhm @ 100A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO-220-3
Package TO-220-3
Win Source Part Number 759960-IPP034NE7N3GXKSA1
Popularity Medium
Supply and Demand Status Limited
Family Name IPP034NE7N3
Introduction Date April 30, 2009
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian IPP034NE7N3GXKSA1 CAD Model

Description

The Infineon Technologies IPP034NE7N3GXKSA1 is an N-channel MOSFET power switch manufactured by Infineon Technologies.

  • Channel Type: N
  • Drain-Source Voltage: 75V
  • Continuous Drain Current: 100A (Tc)
  • Gate Charge (Qg) (maximum) @ Vgs: 117nC @ 10V
  • Input Capacitance (Ciss) (maximum) @ Vds: 8130pF @ 37.5V
  • Operating Temperature: -55°C to 175°C
  • Package: TO-220-3

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Quantity Unit Price Ext. Price
35+ $1.6012 $56.0420
80+ $1.3139 $105.1120
120+ $1.2728 $152.7360
165+ $1.2317 $203.2305
210+ $1.1907 $250.0470
285+ $1.0675 $304.2375
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