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DMC1030UFDBQ-7

Part No DMC1030UFDBQ-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 12V 5.1A UDFN2020 / Mosfet Array N and P-Channel Complementary 12V 5.1A 1.36W Surface Mount U-DFN2020-6 (Type B)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Manufacturer Diodes Incorporated
Packaging Reel - TR
FET Type N and P-Channel Complementary
FET Feature Standard
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 5.1A
Rds On (Max) @ Id, Vgs 34mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1003pF @ 6V
Power - Max 1.36W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Case / Package 6-UDFN Exposed Pad
Supplier Device Package U-DFN2020-6 (Type B)
Base Product Number DMC1030
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number DMC1030UFDBQ-7DICT,DMC1030UFDBQ-7DITR,DMC1030UFDBQ-7DIDKR,DMC1030UFDBQ-7-ND
Standard Package 3,000
Win Source Part Number 1324500-DMC1030UFDBQ-7
Ultra Librarian 3D Model Ultra Librarian DMC1030UFDBQ-7 CAD Model

Description

Introducing the DMC1030UFDBQ-7 from Diodes Incorporated

The DMC1030UFDBQ-7 is a state-of-the-art MOSFET transistor designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This product is part of their extensive MOSFET portfolio and is engineered to deliver high-efficiency power management and conversion in a compact, surface-mount package.

Key Features

  • Low On-Resistance: The DMC1030UFDBQ-7 boasts an exceptionally low on-resistance, which translates to minimal power loss during operation and enhances overall efficiency.
  • High-Speed Switching: Designed for fast switching applications, this MOSFET provides quick response times, making it ideal for high-frequency power switching.
  • PowerTrench® Technology: Incorporating Diodes Incorporated's PowerTrench® technology, this device achieves optimal performance by reducing gate charge and lowering intrinsic capacitance.
  • Dual N-Channel: This MOSFET features a dual N-Channel configuration, allowing for flexibility in bidirectional switching designs.
  • Surface-Mount Package: The DMC1030UFDBQ-7 is available in a space-saving DFN2020-6 (Type B) package, making it suitable for compact circuit designs.

Applications

The versatility of the DMC1030UFDBQ-7 allows it to be used in a wide array of applications, including:

  • Power management for consumer electronics such as smartphones, tablets, and laptops.
  • DC-DC converters that require efficient power conversion and management.
  • Load switching in portable devices where battery life is critical.
  • Motor control circuits in robotics and industrial automation systems.
  • LED lighting solutions, providing reliable and efficient power control.

Quality and Reliability

Diodes Incorporated is committed to delivering products that meet the highest standards of quality and reliability. The DMC1030UFDBQ-7 is no exception, with rigorous testing and quality control measures in place to ensure consistent performance across all applications. Whether you're designing power systems for consumer electronics or industrial machinery, the DMC1030UFDBQ-7 is a reliable choice that will help optimize your design's performance and efficiency.

For detailed specifications and application notes, please refer to the official datasheet provided by Diodes Incorporated, ensuring that you have the most accurate and up-to-date information for your design requirements.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2911 $50.9425
420+ $0.2389 $100.3380
650+ $0.2314 $150.4100
895+ $0.2239 $200.3905
1,155+ $0.2165 $250.0575
1,550+ $0.1941 $300.8550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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