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Same model may have multiple batches, images only for reference.
SPP80N06S2-07 Real Image
Same model may have multiple batches, images only for reference.

SPP80N06S2-07

Part No SPP80N06S2-07
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A TO-220
Datasheet
SPP80N06S2-07 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 180μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 4540pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 6.6 mOhm @ 68A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1101635-SPP80N06S2-07
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPP80N06S2-07 CAD Model

Description

The Infineon Technologies 439547 MOSFET is a N-channel power transistor that is designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 250W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 80A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 180μA
  • Maximum Rds On @ Id,Vgs: 6.6 mOhm @ 68A, 10V
  • Package: PG-TO220-3-1
  • Mounting Type: Through Hole
  • Operating Temperature: -55°C to 175°C (TJ)
  • Status: Obsolete (EOL)

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95+ $1.2710 $120.7450
145+ $1.2312 $178.5240
195+ $1.1915 $232.3425
255+ $1.1518 $293.7090
340+ $1.0326 $351.0840
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