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Same model may have multiple batches, images only for reference.
SI1402DH-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1402DH-T1-GE3

Part No SI1402DH-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 2.7A SOT363
Datasheet
SI1402DH-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.6V @ 250μA
Max Gate Charge 4.5nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 950mW (Ta)
Maximum Rds On at Id,Vgs 77 mOhm @ 3A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 1095684-SI1402DH-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1402DH-T1-GE3 CAD Model

Description

The Vishay SI1402DH-T1-GE3 is an N-Channel MOSFET discrete semiconductor product that has a medium popularity.

  • Maximum Power Dissipation: 950mW
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On @ Id,Vgs: 77 mOhm @ 3A, 4.5V
  • Maximum Gate-Source Voltage: ±12V
  • Status: Obsolete
  • Supply and Demand Status: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4717 $58.9625
300+ $0.3871 $116.1300
465+ $0.3751 $174.4215
640+ $0.3629 $232.2560
825+ $0.3508 $289.4100
1,105+ $0.3145 $347.5225
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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