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Same model may have multiple batches, images only for reference.
SPP80N06S2-09 Real Image
Same model may have multiple batches, images only for reference.

SPP80N06S2-09

Part No SPP80N06S2-09
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A TO-220
Datasheet
SPP80N06S2-09 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 125μA
Max Gate Charge 80nC @ 10V
Max Input Capacitance 3140pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 190W (Tc)
Maximum Rds On at Id,Vgs 9.1 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1101636-SPP80N06S2-09
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPP80N06S2-09 CAD Model

Description

The Infineon Technologies SPP80N06S2-09 is an N-channel MOSFET.

  • Power Dissipation: 190W (Tc)
  • Packaging: Tube/Rail
  • Mounting: Through-Hole
  • Drive Voltage: 10V
  • Maximum Rds on: 9.1 mOhm @ 50A, 10V
  • Application: Discrete Semiconductor Products
  • Drain-Source Breakdown Voltage: 55V
  • Maximum Continuous Drain Current: 80A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 125μA
  • Maximum Gate Charge: 80nC @ 10V
  • Maximum Input Capacitance: 3140pF @ 25V

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23+ $7.8321 $180.1383
31+ $7.5791 $234.9521
40+ $7.3262 $293.0480
53+ $6.5685 $348.1305
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