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SPP80N06S2L-09

Name: SPP80N06S2L-09
Brand: Infineon Technologies
SKU: 518430
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	SPP80N06S2L-09
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 55V 80A TO-220
Datasheet	SPP80N06S2L-09 Datasheet
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube/Rail
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	55V
Continuous Drain Current at 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	2V @ 125μA
Max Gate Charge	105nC @ 10V
Max Input Capacitance	3480pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	190W (Tc)
Maximum Rds On at Id,Vgs	8.5 mOhm @ 52A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	Through Hole
Case / Package	PG-TO220-3-1
Dimension	TO-220-3
Win Source Part Number	1101639-SPP80N06S2L-09
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian SPP80N06S2L-09 CAD Model

Alternative Products

Description

The Infineon Technologies SPP80N06S2L-09 is an N-channel MOSFET transistor with a drain-source breakdown voltage of 55V and a continuous drain current of 80A @ 25°C.

Drain-Source Breakdown Voltage: 55V
Continuous Drain Current: 80A @ 25°C
Maximum Rds on: 8.5 mOhm @ 52A, 10V
Gate-Source Threshold Voltage: 2V @ 125μA
Max Gate Charge: 105nC @ 10V
Max Input Capacitance: 3480pF @ 25V
Package: PG-TO220-3-1
Maximum Power Dissipation: 190W (Tc)
Product Category: Discrete Semiconductor Products
Drive Voltage: 4.5V to 10V
Temperature Range: -55°C to 175°C (TJ)
Status: Obsolete
Supply and Demand: Balance

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